| Customization: | Available |
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| Warranty: | 10 Years |
| Number of Cells: | 1 Piece |
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Product Description
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Silicon Hetero Junction Technology (HJT) is based on an emitter and back surface field (BSF) that are produced by low temperature growth of ultra-thin layers of amorphous silicon (a-Si:H) on both sides of very well cleaned mono silicon wafers, less than 200 μm in thickness, where electrons and holes are photogenerated.
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Hetero Junction Technology (HJT) silicon solar cells have attracted a lot of attention because they can achieve high conversion efficiencies, up to 25%, while using low temperature processing, typically below 250 °C for the complete process. Low processing temperature allows handling of silicon wafers of less than 100 μm thick while maintaining a high yield.
Key features High Eff and high Voc |
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