| Customization: | Available |
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| Warranty: | 10 Years |
| Number of Cells: | 1 Piece |
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Product Description
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Metal Assisted Chemical etching (MACE) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In a well accepted model describing MACE process, the oxidant is preferred to be reduced at the surface of metal catalyst, and holes (h+) are injected from metal catalyst to Si or electrons (e−) are transferred from Si to metal catalyst. Si underneath metal catalyst has the maximum hole concentration, therefore the oxidation and dissolution of Si occur preferentially underneath metal catalyst. Solar energy conversion efficiency is found to be increased when SiNWs with high aspect ratio are employed in the surface of slar light irradiation. |
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